2006-12-01 page 1 rev. 1. 3 bss119 sipmos ? small-signal-transistor product summary v ds 100 v r ds(on) 6 ? i d 0.17 a feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated pg-sot23 1 2 3 vps05161 gate pin1 drain pin 3 source pin 2 marking ssh type package pb-free tape and reel information bss119 pg-sot23 yes l6327: 3000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.17 0.13 a pulsed drain current t a =25c i d puls 0.68 reverse diode d v /d t i s =0.17a, v ds =80v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56
2006-12-01 page 2 rev. 1.3 bss119 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimal footprint r thjs - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 100 - - v gate threshold voltage, v gs = v ds i d =50a v gs(th) 1.3 1.8 2.3 zero gate voltage drain current v ds =100v, v gs =0, t j =25c v ds =100v, v gs =0, t j =150c i dss - - 0.05 0.5 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - 10 100 na drain-source on-state resistance v gs =4.5v, i d =0.13 a r ds(on) - 4.9 10 ? drain-source on-state resistance v gs =10v, i d =0.17a r ds(on) - 3.4 6
2006-12-01 page 3 rev. 1.3 bss119 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =0.13a 0.08 0.17 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 60 78 pf output capacitance c oss - 8.6 11.2 reverse transfer capacitance c rss - 3.1 4.1 turn-on delay time t d(on) v dd =50v, v gs =10v, i d =0.17a, r g =6 - 2.7 4 ns rise time t r - 3.1 4.6 turn-off delay time t d(off) - 9.3 14 fall time t f - 27 40 gate charge characteristics gate to source charge q gs v dd =80v, i d =0.17a - 0.08 0.12 nc gate to drain charge q gd - 0.76 1.1 gate charge total q g v dd =80v, i d =0.17a, v gs =0 to 10v - 1.67 2.5 gate plateau voltage v (plateau) v dd =80v, i d = 0.17 a - 3.4 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.17 a inv. diode direct current, pulsed i sm - - 0.68 inverse diode forward voltage v sd v gs =0, i f = i s - 0.8 1.2 v reverse recovery time t rr v r =50v, i f = l s , d i f /d t =100a/s - 21.7 32.5 ns reverse recovery charge q rr - 10 15 nc
2006-12-01 page 4 rev. 1.3 bss119 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 w 0.38 bss119 p tot 2 drain current i d = f ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 a 0.18 bss119 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 0 10 1 10 2 10 3 v v ds -3 10 -2 10 -1 10 0 10 1 10 a bss119 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 240.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 k/w bss119 z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2006-12-01 page 5 rev. 1.3 bss119 5 typ. output characteristic i d = f ( v ds ) parameter: t j = 25 c, v gs 0 0.5 1 1.5 2 v 3 v ds 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 a 0.34 i d 10v 7v 6v 5v 4.8v 4.6v 4v 3.8v 3.4v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j = 25 c, v gs 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 a 0.34 i d 0 1 2 3 4 5 6 7 8 9 10 ? 12 r ds(on) 3.4v 3.8v 4v 4.6v 4.8v 5v 6v 7v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t j = 25 c 0 0.8 1.6 2.4 3.2 v 4.4 v gs 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 a 0.34 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 a 0.34 i d 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.22 0.24 s 0.3 g fs
2006-12-01 page 6 rev. 1.3 bss119 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.17 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 2 4 6 8 10 12 14 16 18 20 ? 24 bss119 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d =50a -60 -20 20 60 100 c 160 t j 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v 2.6 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 5 10 15 20 v 30 v ds 0 10 1 10 2 10 3 10 pf c crss coss ciss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -3 10 -2 10 -1 10 0 10 a bss119 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-1 2-01 page 7 rev. 1.3 bss119 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 0 0.4 0.8 1.2 1.6 2 nc 2.6 q g 0 2 4 6 8 10 12 v 16 bss119 v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 v 120 bss119 v (br)dss
2006-12-01 page 8 rev. 1.3 bss119 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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